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| CBSL60B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL60B is Designed for PACKAGE STYLE .450 BAL FLG (A) .060x45 B A FULL R .100x45 C D F FEATURES: * Input Matching Network * * OmnigoldTM Metalization System E P G H K J M L N MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC O DIM A B MINIMUM inches / mm MAXIMUM inches / mm 8.0 A 60 V 28 V 3.5 V 146 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 1.2 OC/W O O .055 / 1.40 .120 / 3.05 .130 / 3.30 .785 / 19.94 .455 / 11.56 .120 / 3.05 .230 / 5.84 .838 / 21.28 1.095 / 27.81 .525 / 13.34 .002 / 0.05 .055 / 1.40 .080 . 2.03 .445 / 11.30 .850 / 21.59 1.105 / 28.07 .535 / 13.59 .005 / 0.15 .065 / 1.65 .095 / 2.41 .195 / 4.95 .455 / 11.56 .465 / 11.81 .130 / 3.30 C D E F G H J K L M N P ORDER CODE: ASI10584 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICEO hFE PG VSRW TC = 25 C O NONETEST CONDITIONS IC = 100 mA IC = 100 mA IE = 20 mA VCE = 25 V VCE = 5.0 V VCC = 26 V POUT = 60 W VCC = 26 V IC =3.0 A ICQ = 2 X 200 mA f = 960 MHz f = 960 MHz MINIMUM TYPICAL MAXIMUM 60 28 3.5 30 25 8.5 5:1 80 UNITS V V V mA --dB --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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